Performance of low dark current InGaAs shortwave infrared detector

Tao Li; Ji-feng Cheng; Xiu-mei Shao; Hong-hai Deng; Yu Chen; Heng-jing Tang; Xue Li; Hai-mei Gong

doi:10.1117/12.977229

15 October 2012 Performance of low dark current InGaAs shortwave infrared detector

Tao Li, Ji-feng Cheng, Xiu-mei Shao, Hong-hai Deng, Yu Chen, Heng-jing Tang, Xue Li, Hai-mei Gong

Proceedings Volume 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy; 841907 (2012) https://doi.org/10.1117/12.977229
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

In_xGa_1-xAs ternary compound is suitable for detector applications in the shortwave infrared (1-3 μm) band. The alloy In_0.53Ga_0.47As is lattice-matched to InP substrate, which leads to high quality epitaxial layers. Consistently the In_0.53Ga_0.47As detector shows low dark current density and high detectivity at room temperature with wavelength response between 0.9 and 1.7 μm. In this paper, planar-type 24×1 linear InGaAs detector arrays with guard-ring structure were designed and fabricated based on n-i-n⁺ type InP/In_0.53Ga_0.47As/InP epitaxial structure by sealed-ampoule diffusion method. At first the dark current density is about 30~60 nA/cm² at -0.1 V at room temperature. After modifications to the detector design and processing, the dark current density reduces to 2~9 nA/cm² at -0.1 V at 293 K. The ideality factors simulated from I-V curves come close to 1 and less than the factors of previous detectors, which indicates that the dark current is dominated by diffusion current, while the generation-recombination current exhibits in the previous detectors. At the temperature of 293 K, the R₀A of the detector reaches more than 1×10⁷ Ω·cm², the relative spectral response is in the range of 0.9 μm to 1.68 μm, the mean peak responsivity is 1.2 A/W and the mean peak detectivity is more than 3.0×10¹² cm·Hz^1/2/W.

Citation Download Citation

Tao Li, Ji-feng Cheng, Xiu-mei Shao, Hong-hai Deng, Yu Chen, Heng-jing Tang, Xue Li, and Hai-mei Gong "Performance of low dark current InGaAs shortwave infrared detector", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 841907 (15 October 2012); https://doi.org/10.1117/12.977229

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