Paper
21 June 2012 Uncooled silicon carbide sensor producing optical signal
Geunsik Lim, Tariq Manzur, Aravinda Kar
Author Affiliations +
Abstract
A novel approach will be discussed to design and fabricate sensors for a wide variety of wavelengths by selecting appropriate acceptor levels in a semiconductor material. An n-type 4H-SiC substrate has been doped with gallium using a laser doping method for sensing the MWIR wavelength of 4.21 mm. The incident MWIR photons change the electron densities in the valence band and the acceptor energy levels, modifying the reflectivity of the sensor. This change in the reflectivity is determined with a He-Ne laser as an optical signal and the sensor can be operated at room temperature. The effect of the photon collection optics on the sensor response has been studied. Also the dopant concentration has been found to affect the optical signal.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Geunsik Lim, Tariq Manzur, and Aravinda Kar "Uncooled silicon carbide sensor producing optical signal", Proc. SPIE 8359, Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security and Homeland Defense XI, 83591A (21 June 2012); https://doi.org/10.1117/12.1000118
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Sensors

Silicon carbide

Photons

Mid-IR

Reflectivity

Gallium

Signal detection

Back to Top