Paper
16 April 2012 Impact of reticle absorber on the imaging properties in ArFi lithography
Jo Finders, O. Mouraille, A. Bouma, A. Ngai, K. Grim, J. van Praagh, C. Toma, J. Miyazaki, M. Higuchi, Y. Kojima, B. Connolly, I. Englard, Y. Cohen, S. Mangan, Michael Ben Yishai, Karine Jullian
Author Affiliations +
Proceedings Volume 8352, 28th European Mask and Lithography Conference; 83520G (2012) https://doi.org/10.1117/12.918018
Event: 28th European Mask and Lithography Conference (EMLC 2012), 2012, Dresden, Germany
Abstract
In this paper we compare the imaging properties of lithographic test structures formed on test masks with different reticle absorbers for use in1.35 NA immersion lithography. We will look into different aspects like process windows and CD fingerprints. Beyond that we look into the topographic effects caused by the different absorbers, the mask 3D effects. We will study the interaction between the different masks and immersion scanner. Special attention is given towards the correctability of the intrafield CD fingerprint by mask and scanner applying dose corrections.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jo Finders, O. Mouraille, A. Bouma, A. Ngai, K. Grim, J. van Praagh, C. Toma, J. Miyazaki, M. Higuchi, Y. Kojima, B. Connolly, I. Englard, Y. Cohen, S. Mangan, Michael Ben Yishai, and Karine Jullian "Impact of reticle absorber on the imaging properties in ArFi lithography", Proc. SPIE 8352, 28th European Mask and Lithography Conference, 83520G (16 April 2012); https://doi.org/10.1117/12.918018
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KEYWORDS
Reticles

Photomasks

Semiconducting wafers

Critical dimension metrology

Scanners

Lithography

Metrology

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