How much further can lithography process windows be improved?

Mary Ann Hockey; Qin Lin; Eric Calderas

doi:10.1117/12.915672

16 March 2012 How much further can lithography process windows be improved?

Mary Ann Hockey, Qin Lin, Eric Calderas

Proceedings Volume 8328, Advanced Etch Technology for Nanopatterning; 83280Q (2012) https://doi.org/10.1117/12.915672
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Utilizing thin photoresist layers for successful pattern transfer has gained acceptance as the lithography process of record, primarily due to the incorporation of silicon-containing hardmask (HM) layers for added etching resistance. Our work includes understanding the impact of HfO₂ and ZrO₂ nanocrystal additives incorporated into spin-on HM materials. The goal is to quantify both etch selectivity and the improvements in the lithography process windows with the addition of HfO₂ nanocrystals into various types of polymers. Conventional 193-nm photoresists and spin-on carbon materials were selected as references for etch selectivity calculations. Results indicate there are process window advantages with improvements in the depth of focus (DOF) and overall pattern collapse margins. In addition, the ability to quantify line width roughness (LWR) as a function of resolution has been accomplished for these HM materials, and results show low levels of LWR are achievable. Overall lithography process margins are positive for DOF, exposure latitude (EL), LWR, and pattern collapse with the incorporation of HfO₂-enhanced HM coatings for etch protection.

Citation Download Citation

Mary Ann Hockey, Qin Lin, and Eric Calderas "How much further can lithography process windows be improved?", Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280Q (16 March 2012); https://doi.org/10.1117/12.915672

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