Paper
5 April 2012 E-beam inspection system for comparison of wafer and design data
Oliver D. Patterson, Julie Lee, Michael D. Monkowski, Deborah A Ryan, Shih-tsung Chen, Shuen Cheng Lei, Fei Wang, Chung Han Lee, Derek Tomlinson, Wei Fang, Jack Jau
Author Affiliations +
Abstract
Effectively patterning the intended design on the wafer for all possible geometries allowed by the design rule document is one of the most critical challenges for semiconductor manufacturing. Despite new lithography techniques like OPC, double patterning and the latest patterning simulation methods, and on-wafer evaluation using brightfield inspection and SEM review tools, patterning problems still occur and can result in a major delay in the qualification of a technology or product. Of particular concern are shorts and opens that cause product chip failure. Initial discovery of yield issues when a chip is being functionally tested is highly undesirable. A system for in-line, die to database (D2DB) comparison using E-beam inspection has been developed to address this risk. This system offers a substantial new line of defense against these patterning issues. The D2DB system is described along with a methodology for applying it for pattern fidelity inspection. Some examples illustrating the system operation are presented.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oliver D. Patterson, Julie Lee, Michael D. Monkowski, Deborah A Ryan, Shih-tsung Chen, Shuen Cheng Lei, Fei Wang, Chung Han Lee, Derek Tomlinson, Wei Fang, and Jack Jau "E-beam inspection system for comparison of wafer and design data", Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83242J (5 April 2012); https://doi.org/10.1117/12.918072
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CITATIONS
Cited by 22 scholarly publications.
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KEYWORDS
Semiconducting wafers

Inspection

Electron beam lithography

Optical proximity correction

Photomasks

Metals

Defect detection

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