EUVL multilayer mask blank defect mitigation for defect-free EUVL mask fabrication

Pei-Yang Yan; Yan Liu; Marilyn Kamna; Guojing Zhang; Robert Chen; Fabian Martinez

doi:10.1117/12.927018

22 March 2012 EUVL multilayer mask blank defect mitigation for defect-free EUVL mask fabrication

Pei-Yang Yan, Yan Liu, Marilyn Kamna, Guojing Zhang, Robert Chen, Fabian Martinez

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 83220Z (2012) https://doi.org/10.1117/12.927018
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

For Extreme Ultra-violet Lithography (EUVL) targeting at 11nm and beyond design rules, the minimum printable EUVL multilayer (ML) mask defect size can be as small as 20-25nm. As a result, the defect-free EUVL ML mask blank fabrication remains the top challenge for EUVL mask. Aspects of this challenge include high quality blank substrate material (low thermal expansion material) fabrication, substrate polishing, substrate cleaning, blank handling, ML deposition, and high sensitivity substrate and blank defect inspection. High investment cost and potential low blank yield due to stringent defect-free requirement can quickly drive up EUVL cost of ownership. It is anticipated, however, the EUVL ML blank yield can be drastically improved if we can allow a few defects on a ML blank. Utilizing such a "defective" grade mask blank to fabricate a defect-free EUVL mask requires several defect mitigation schemes during mask patterning processes. These schemes include modifying mask absorber pattern via repair tool to compensate the effect of an adjacent ML defect and using absorber pattern to cover the ML defects. In this paper, we focused on the study and demonstration of using device pattern to cover limited number of blank defects. The steps of this defect mitigation process include blank fiducial mark patterning, defect location relative to fiducial mark precision measurement, automated pattern shift solution simulation for a given ML defect map, and precision alignment of the device pattern to the blank defects during e-beam write. With these steps, we have successfully demonstrated the coverage of several targeted ML blank defects simultaneously via global device pattern shift.

Citation Download Citation

Pei-Yang Yan, Yan Liu, Marilyn Kamna, Guojing Zhang, Robert Chen, and Fabian Martinez "EUVL multilayer mask blank defect mitigation for defect-free EUVL mask fabrication", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220Z (22 March 2012); https://doi.org/10.1117/12.927018

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available