Paper
28 November 2011 Broad gain injectorless quantum-cascade lasers with low threshold emitting around 8.6 μm
Hua Li, Simeon Katz, Gerhard Boehm, Markus-Christian Amann
Author Affiliations +
Proceedings Volume 8308, Optoelectronic Materials and Devices VI; 83081R (2011) https://doi.org/10.1117/12.917908
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China
Abstract
Broad gain lasers attract much interest due to the practical gas sensing applications. A step well structure with double optical transitions is implemented in the active region of injectorless quantum-cascade lasers (QCLs) to achieve extended gain bandwidth. The step well is constructed by a "short period superlattice" which provides an equivalent GaInAlAs alloy quantum step well in each active module. The fabricated devices show an ultrabroadband gain spectrum of 480 cm-1 (4 μm) at room temperature in pulsed mode. The laser threshold current density is as low as 1.1 kA/cm2 which is the lowest among the broad gain QCLs emitting at similar wavelengths and the slope efficiency is 1.6 W/A at room temperature.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hua Li, Simeon Katz, Gerhard Boehm, and Markus-Christian Amann "Broad gain injectorless quantum-cascade lasers with low threshold emitting around 8.6 μm", Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081R (28 November 2011); https://doi.org/10.1117/12.917908
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KEYWORDS
Quantum cascade lasers

Laser damage threshold

Electroluminescence

Laser applications

Quantum wells

Superlattices

Temperature metrology

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