Implant confined 1850nm VCSELs

Matthew M. Dummer; Klein Johnson; Mary Hibbs-Brenner; William K. Hogan

doi:10.1117/12.915888

7 February 2012 Implant confined 1850nm VCSELs

Matthew M. Dummer, Klein Johnson, Mary Hibbs-Brenner, William K. Hogan

Proceedings Volume 8276, Vertical-Cavity Surface-Emitting Lasers XVI; 82760Y (2012) https://doi.org/10.1117/12.915888
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Vixar has recently developed VCSELs at 1850nm, a wavelength of interest for neural stimulation applications. This paper discusses the design and fabrication of these new long-wavelength lasers, and reports on the most recent performance results. The VCSELs are based on InP-compatible materials and incorporate highly strained InGaAs quantum wells to achieve 1850nm emission. Current confinement in the VCSEL is achieved by ion implantation, resulting in a planar fabrication process with a single epitaxial growth step. Continuous wave lasing is demonstrated for aperture sizes varying from 8 to 50μm with threshold currents of 1-17mA. The devices demonstrate peak power of 7mW at room temperature and CW operation up to 85°C.

Citation Download Citation

Matthew M. Dummer, Klein Johnson, Mary Hibbs-Brenner, and William K. Hogan "Implant confined 1850nm VCSELs", Proc. SPIE 8276, Vertical-Cavity Surface-Emitting Lasers XVI, 82760Y (7 February 2012); https://doi.org/10.1117/12.915888

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