Paper
23 February 2012 Suppression of phonon sidebands in the spectrum of nitrogen vacancy centers in diamond nano-crystals
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Abstract
We report the substrate effects on the zero-phonon transitions and suppression of phonon side bands in the NV center spectrum. Fluorescence spectra of NV centers in cryogenic temperatures were measured by depositing diamond nanocrystals on different substrates including glass slides, undoped Si, and silica (1~2μm) on undoped Si (SiO2/Si). We found that SiO2/Si substrate was an effective substrate to suppress the phonon side band from spectra of NV- centers. Temperature dependence of NV- zero-phonon line Debye-Waller factor on Si and SiO2/Si were measured, from 2.5K to 230K, Debye-Waller factor decreased linearly on both of the two substrates.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hong-Quan Zhao, Masazumi Fujiwara, and Shigeki Takeuchi "Suppression of phonon sidebands in the spectrum of nitrogen vacancy centers in diamond nano-crystals", Proc. SPIE 8272, Advances in Photonics of Quantum Computing, Memory, and Communication V, 82720W (23 February 2012); https://doi.org/10.1117/12.906638
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Cited by 1 scholarly publication.
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KEYWORDS
Silicon

Diamond

Phonons

Temperature metrology

Glasses

Luminescence

Cryogenics

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