Practical rules for spin-orbit engineering of [110]-oriented III-V heterostructures

Henri-Jean Drouhin; Federico Bottegoni; Guy Fishman; Jean-Eric Wegrowe

doi:10.1117/12.915700

20 January 2012 Practical rules for spin-orbit engineering of [110]-oriented III-V heterostructures

Henri-Jean Drouhin, Federico Bottegoni, Guy Fishman, Jean-Eric Wegrowe

Proceedings Volume 8268, Quantum Sensing and Nanophotonic Devices IX; 82682V (2012) https://doi.org/10.1117/12.915700
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

New boundary conditions are derived for tunnel-heterojunctions, where the effective Hamiltonian is a generic power of the momentum-operator. A novel expression of probability-current operator, which can be also applied in presence of the D'yakonov-Perel (DP) Hamiltonian, has to be used. We test our technique on the interface between two semi-infinite media, with on one side a free-electron-like material and on the other side the [110]- oriented GaAs barrier.

Citation Download Citation

Henri-Jean Drouhin, Federico Bottegoni, Guy Fishman, and Jean-Eric Wegrowe "Practical rules for spin-orbit engineering of [110]-oriented III-V heterostructures", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82682V (20 January 2012); https://doi.org/10.1117/12.915700

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