III-V nanowires by self-assembly MOVPE technology for novel and efficient opto-electronic and photovoltaic devices

Nico Lovergine; Paola Prete

doi:10.1117/12.908618

20 January 2012 III-V nanowires by self-assembly MOVPE technology for novel and efficient opto-electronic and photovoltaic devices

Nico Lovergine, Paola Prete

Author Affiliations +

Proceedings Volume 8268, Quantum Sensing and Nanophotonic Devices IX; 82680Q (2012) https://doi.org/10.1117/12.908618
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

We report on the self-assembly by Au-catalyzed metalorganic vapor phase epitaxy (MOVPE) of GaAs-based nanowires (NWs) and their applications to novel and efficient nano-devices. The growth of GaAs and GaAs-AlGaAs core-shell NWs is presented as case study, focusing on the dependence of their structural, optical and electrical properties on MOVPE conditions. MSM diodes fabricated using as-grown core-shell NWs are reported, along with their photoelectric performances. These devices show potentials for applications as fast photo-detectors and efficient solar cells.

Citation Download Citation

Nico Lovergine and Paola Prete "III-V nanowires by self-assembly MOVPE technology for novel and efficient opto-electronic and photovoltaic devices", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82680Q (20 January 2012); https://doi.org/10.1117/12.908618

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