Development Of Gallium Arsenide-Based Spatial Light Modulators

Michael C. Hebbron; Surinder S. Makh

doi:10.1117/12.941980

19 February 1988 Development Of Gallium Arsenide-Based Spatial Light Modulators

Michael C. Hebbron, Surinder S. Makh

Proceedings Volume 0825, Spatial Light Modulators and Applications II; (1988) https://doi.org/10.1117/12.941980
Event: 31st Annual Technical Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, San Diego, CA, United States

Abstract

A liquid crystal light valve (LCLV) incorporating a GaAs photoconductor has been developed. The device structure is based upon a microdiode array and hybrid field effect twisted nematic liquid crystal cell. The active area of 2.54 x 2.54 cm (1 in. x 1 in.) is defined by approximately 40 million, 2 μm square Schottky diodes at 4 μm pitch. Two device types are reported, both employing 2 in. GaAs wafers of semi-insulating LEC grown material. The first device has a photoconductor thinned to 70 μm. An ohmic back contact is established with Au/Ge Ni alloy. Results obtained from this device are presented. A second device is currently under investigation featuring a thinner photo-conductor <20 μm and a Se ion implanted heavily doped n+ back contact. Construction details are given for both LCLVs and reasons for initial design modifications are included. A brief overview of the present status of the second generation GaAs LCLV is presented and planned developments discussed.

Citation Download Citation

Michael C. Hebbron and Surinder S. Makh "Development Of Gallium Arsenide-Based Spatial Light Modulators", Proc. SPIE 0825, Spatial Light Modulators and Applications II, (19 February 1988); https://doi.org/10.1117/12.941980

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