Paper
14 February 2012 2.7-μm single-frequency TEM00 operation of Sb-based diode-pumped external-cavity VCSEL
Alexandre Laurain, Laurent Cerutti, Mikhael Myara, Arnaud Garnache
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Abstract
We present the design, technology and performances of a tunable Sb-based diode-pumped type-I quantum-well vertical-external-cavity surface-emitting lasers emitting at 2.7μm. The half VCSEL structure was grown by MBE with quantum-well growth temperature of 440 °C. The sample was thermally annealed to optimize the QW gain design. We report on room-temperature continuous-wave laser with 0.17mW output power and low threshold incident pump intensity of 0.7kW/cm2 while pumping at 830nm with a commercial diode laser. The external cavity provides a circular TEM00 beam with a low divergence of 3.6°. The short mm-long optical cavity laser exhibits tunable single frequency operation, with a side mode suppression ratio 23 dB, a linewidth 4GHz and a linear light polarization. Thermal and optical properties are studied.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandre Laurain, Laurent Cerutti, Mikhael Myara, and Arnaud Garnache "2.7-μm single-frequency TEM00 operation of Sb-based diode-pumped external-cavity VCSEL", Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 82420L (14 February 2012); https://doi.org/10.1117/12.909355
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KEYWORDS
Quantum wells

Semiconductor lasers

Absorption

Continuous wave operation

Polarization

Vertical cavity surface emitting lasers

Reflectivity

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