A theoretical structure calculation of MWIR HgCdTe e-APD

Ren-jie Gu; Chuan Shen; Lu Chen

doi:10.1117/12.899449

8 September 2011 A theoretical structure calculation of MWIR HgCdTe e-APD

Ren-jie Gu, Chuan Shen, Lu Chen

Proceedings Volume 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications; 81930U (2011) https://doi.org/10.1117/12.899449
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

A theoretical calculation result of Hg_1-xCd_xTe (x=0.3) avalanche photodiodes (APDs) based on PIN structure is obtained in the paper, which has a ratio of ionization factor k=0.06. The energy dispersion factor and the threshold energy are acquired according to the parameters of material. And the gain, as well as the breakdown voltage, is obtained. The composition, thickness, doping level is calculated theoretically to get an optimized APD device.

Citation Download Citation

Ren-jie Gu, Chuan Shen, and Lu Chen "A theoretical structure calculation of MWIR HgCdTe e-APD", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81930U (8 September 2011); https://doi.org/10.1117/12.899449

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