The assessment of the impact of mask pattern shape variation on the OPC-modeling by using SEM-contours from wafer and mask

Daisuke Hibino; Hiroyuki Shindo; Yutaka Hojyo; Thuy Do; Aasutosh Dave; Timothy Lin; Ir Kusnadi; John L. Sturtevant

doi:10.1117/12.898843

13 October 2011 The assessment of the impact of mask pattern shape variation on the OPC-modeling by using SEM-contours from wafer and mask

Daisuke Hibino, Hiroyuki Shindo, Yutaka Hojyo, Thuy Do, Aasutosh Dave, Timothy Lin, Ir Kusnadi, John L. Sturtevant

Author Affiliations +

Proceedings Volume 8166, Photomask Technology 2011; 81661S (2011) https://doi.org/10.1117/12.898843
Event: SPIE Photomask Technology, 2011, Monterey, California, United States

Abstract

Optical Proximity Correction (OPC) becomes complicated, shrinking a design rule. As a result, measurement points have increased, and improving the OPC model quality has become more difficult. To improve OPC simulation cost, Contour-based OPC-modeling is superior to CD-based, because Contour-based shape based rich information. Hence, Contour-based OPC-modeling is imperative in the next generation lithography, as reported in SPIE2010[5]. In this study, Mask SEM-contours were input into OPC model calibration in order to verify the impact of mask pattern shape on the quality of the OPC model. Advanced SEM contouring technology was applied to both of Wafer CD-SEM and Mask CD-SEM in examining the effectiveness of OPC model calibration. The evaluation results of the model quality will be reported. The advantage of Contour based OPC modeling using Wafer SEM-Contour and Mask SEM-Contour in the next generation computational lithography will be discussed.

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Daisuke Hibino, Hiroyuki Shindo, Yutaka Hojyo, Thuy Do, Aasutosh Dave, Timothy Lin, Ir Kusnadi, and John L. Sturtevant "The assessment of the impact of mask pattern shape variation on the OPC-modeling by using SEM-contours from wafer and mask", Proc. SPIE 8166, Photomask Technology 2011, 81661S (13 October 2011); https://doi.org/10.1117/12.898843

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