OPC modeling and correction solutions for EUV lithography

James Word; Christian Zuniga; Michael Lam; Mohamed Habib; Kostas Adam; Michael Oliver

doi:10.1117/12.899591

13 October 2011 OPC modeling and correction solutions for EUV lithography

James Word, Christian Zuniga, Michael Lam, Mohamed Habib, Kostas Adam, Michael Oliver

Proceedings Volume 8166, Photomask Technology 2011; 81660Q (2011) https://doi.org/10.1117/12.899591
Event: SPIE Photomask Technology, 2011, Monterey, California, United States

Abstract

The introduction of EUV lithography into the semiconductor fabrication process will enable a continuation of Moore's law below the 22nm technology node. EUV lithography will, however, introduce new sources of patterning distortions which must be accurately modeled and corrected with software. Flare caused by scattered light in the projection optics result in pattern density-dependent imaging errors. The combination of non-telecentric reflective optics with reflective reticles results in mask shadowing effects. Reticle absorber materials are likely to have non-zero reflectivity due to a need to balance absorber stack height with minimization of mask shadowing effects. Depending upon placement of adjacent fields on the wafer, reflectivity along their border can result in inter-field imaging effects near the edge of neighboring exposure fields. Finally, there exists the ever-present optical proximity effects caused by diffractionlimited imaging and resist and etch process effects. To enable EUV lithography in production, it is expected that OPC will be called-upon to compensate for most of these effects. With the anticipated small imaging error budgets at sub-22nm nodes it is highly likely that only full model-based OPC solutions will have the required accuracy. The authors will explore the current capabilities of model-based OPC software to model and correct for each of the EUV imaging effects. Modeling, simulation, and correction methodologies will be defined, and experimental results of a full model-based OPC flow for EUV lithography will be presented.

Citation Download Citation

James Word, Christian Zuniga, Michael Lam, Mohamed Habib, Kostas Adam, and Michael Oliver "OPC modeling and correction solutions for EUV lithography", Proc. SPIE 8166, Photomask Technology 2011, 81660Q (13 October 2011); https://doi.org/10.1117/12.899591

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available