Properties of Si/SiOx quantum well structure for solar cells applications

Kwang Ho Kim; Ji-Hoon Kim; Pyungwoo Jang; Chisup Jung; Kyu Seomoon

doi:10.1117/12.894447

22 September 2011 Properties of Si/SiO_x quantum well structure for solar cells applications

Kwang Ho Kim, Ji-Hoon Kim, Pyungwoo Jang, Chisup Jung, Kyu Seomoon

Proceedings Volume 8111, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II; 81111D (2011) https://doi.org/10.1117/12.894447
Event: SPIE Solar Energy + Technology, 2011, San Diego, California, United States

Abstract

The SiO_x/Si quantum wells (QWs) structures were fabricated by using the successive deposition technique, as quantum confinement device to increase the effective energy bandgap and passivation effect in Si surface for the third generation solar cell applications. In Si/SiO_x QWs, the thicknesses of Si layers and SiOx layers were varied between 1 to 5 nm, respectively. The roughness of sputter-deposited Si on SiO_x was less than 4 Å in the thickness of 2 nm. By using the SiO_x/Si QW structures on Si surfaces, the lifetime measured by u-PCD technique increased as a result of passivated surface effects. The tunneling phenomena and good interface properties were observed in the fabricated QWs structures.

Citation Download Citation

Kwang Ho Kim, Ji-Hoon Kim, Pyungwoo Jang, Chisup Jung, and Kyu Seomoon "Properties of Si/SiO_x quantum well structure for solar cells applications", Proc. SPIE 8111, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II, 81111D (22 September 2011); https://doi.org/10.1117/12.894447

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