I-Line Wafer Stepper Technology For Gallium Arsenide Applications

Michele Nuhn; Shi-Kay Yao; Brad Avrit

doi:10.1117/12.975605

17 September 1987 I-Line Wafer Stepper Technology For Gallium Arsenide Applications

Michele Nuhn, Shi-Kay Yao, Brad Avrit

Proceedings Volume 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection; (1987) https://doi.org/10.1117/12.975605
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands

Abstract

The ASET i-line, 0.42 N.A. high resolution 10X stepper routinely achieves 0.5 micron lines/spaces over a planar surface and 0.6 micron lines/spaces over topography across the 13 mm diameter field. This paper reports the application of i-line technology to the production of Gallium Arsenide Integrated Circuits.

Citation Download Citation

Michele Nuhn, Shi-Kay Yao, and Brad Avrit "I-Line Wafer Stepper Technology For Gallium Arsenide Applications", Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); https://doi.org/10.1117/12.975605

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