Ultra-high-intensity 1550-nm single junction pulsed laser diodes

J. F. Boucher; John J. Callahan

doi:10.1117/12.882930

25 May 2011 Ultra-high-intensity 1550-nm single junction pulsed laser diodes

J. F. Boucher, John J. Callahan

Proceedings Volume 8039, Laser Technology for Defense and Security VII; 80390B (2011) https://doi.org/10.1117/12.882930
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

New generation of eye safe military applications such as range finding, short range illumination and friend or foe identification have started to use the 1550nm wavelength region. This was encouraged by the advent of diode lasers efficient enough to approach the output power of shorter wavelength, 850nm and 905nm devices. This paper will review the actual performance and technologies of various commercially available 1550nm pulsed laser diodes. The performance and reliability of a new high brightness 1550nm semiconductor laser diode are disclosed and compared. Peak power of up to 35 Watts is achieved out of a single junction 350 micron stripe laser. Similarly, peak power in excess of 20W is achieved with a 180 micron stripe laser. This represents an optical power density of 11.1M W/cm². Other key advantages of this new laser are a fast axis FWHM divergence of 25 degrees and less than a 10mRad divergence after fast axis collimation. The new diode technology will be explained in some detail covering aspects of design, fabrication and adaptation to meet its final target performances. A description of the optimization of chip dimensions and laser packaging is also undertaken. Finally, various ideas are offered to further improve the laser efficiency and power.

Citation Download Citation

J. F. Boucher and John J. Callahan "Ultra-high-intensity 1550-nm single junction pulsed laser diodes", Proc. SPIE 8039, Laser Technology for Defense and Security VII, 80390B (25 May 2011); https://doi.org/10.1117/12.882930

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