On the role of dislocations in influencing the electrical properties of HgCdTe photodiodes

R. K. Sharma; V. Gopal; R. S. Saxena; R. K. Bhan; R. Pal; V. Dhar; R. Muralidharan

doi:10.1117/12.883877

20 May 2011 On the role of dislocations in influencing the electrical properties of HgCdTe photodiodes

R. K. Sharma, V. Gopal, R. S. Saxena, R. K. Bhan, R. Pal, V. Dhar, R. Muralidharan

Proceedings Volume 8012, Infrared Technology and Applications XXXVII; 80123A (2011) https://doi.org/10.1117/12.883877
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

The influence of dislocations on the electrical and photo-electric characteristics of HgCdTe has been widely discussed in published literature. However, an unexplored aspect of the dislocations that has not yet attracted the attention of any of the investigators, is the band gap narrowing/widening induced by the intense stress field around dislocation core. Preliminary estimations show that the band gap narrowing due to the tensile region of the stress field along the dislocations in HgCdTe is high enough to cause significant band gap narrowing in low band gap HgCdTe. An enhanced Zener like band-to-band tunneling is proposed in the vicinity of dislocation cores. The calculations presented here qualitatively explain the observed influence of dislocations on HgCdTe photodiode characteristics.

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R. K. Sharma, V. Gopal, R. S. Saxena, R. K. Bhan, R. Pal, V. Dhar, and R. Muralidharan "On the role of dislocations in influencing the electrical properties of HgCdTe photodiodes", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80123A (20 May 2011); https://doi.org/10.1117/12.883877

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