High performance dual-band InAs/GaSb SLS detectors with nBn and pBp architectures

E. Plis; N. Gautam; S. Myers; S. S. Krishna; E. P Smith; S. Johnson; S. Krishna

doi:10.1117/12.882399

20 May 2011 High performance dual-band InAs/GaSb SLS detectors with nBn and pBp architectures

E. Plis, N. Gautam, S. Myers, S. S. Krishna, E. P Smith, S. Johnson, S. Krishna

Proceedings Volume 8012, Infrared Technology and Applications XXXVII; 80120X (2011) https://doi.org/10.1117/12.882399
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

We report on dual-band (mid-/long-wave infrared) InAs/GaSb strained layer superlattice detector with nBn and pBp architectures. Two band response was registered with 50% cut-off wavelengths of 5μm (both nBn and pBp detectors) and 9μm (nBn)/10μm (pBp). The maximum peak responsivity of MWIR absorber equal to 1.6 A/W (at λ = 5 μm and V_b = +1 V) and LWIR absorber equal to 1.2 A/W (at λ = 10 μm and V_b = -1 V) for nBn detector, with the corresponding values of D* were 1.2 x 10¹¹ Jones and 1.2 x 10¹⁰Jones for MWIR and LWIR absorbers, respectively (77 K). The maximum values of quantum efficiency were estimated to 36% (MWIR) and 15% (LWIR) at V_b = +1V and V_b = -1V. For pBp detector, the responsivity equal to 1.6 A/W (at λ = 5 μm and V_b = +0.4 V) and 1.8 A/W (at λ = 9 μm and V_b = -0.7 V) for MWIR and LWIR absorbers was achieved with corresponding values of specific detectivity 5 x 10¹¹ Jones and 2.6 x 10¹⁰Jones, respectively. The maximum values of quantum efficiency were estimated to 41% (MWIR) and 25% (LWIR) at V_b = +0.4V and V_b = -0.7V. Moreover, the diffusion-limited behavior of dark current at higher temperatures was observed for MWIR absorber for pBp detector. The overall performance of the dual-band InAs/GaSb SLS detectors with investigated designs showed comparable (nBn design) and superior (pBp design) performance to the QWIP detectors both in MWIR and LWIR bands and comparable performance to MCT detectors in MWIR band (nBn and pBp detector designs).

Citation Download Citation

E. Plis, N. Gautam, S. Myers, S. S. Krishna, E. P Smith, S. Johnson, and S. Krishna "High performance dual-band InAs/GaSb SLS detectors with nBn and pBp architectures", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80120X (20 May 2011); https://doi.org/10.1117/12.882399

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