Paper
22 September 1987 Invited Paper Fundamentals Of High Excitation Phenomena In Laser Processing
Andrea Marco Malvezzi
Author Affiliations +
Proceedings Volume 0801, High Power Lasers: Sources, Laser-Material Interactions, High Excitations, and Fast Dynamics; (1987) https://doi.org/10.1117/12.941223
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands
Abstract
The interaction of picosecond laser pulses with solid surfaces is characterized by ultra-fast energy transfer from the electronic system to the lattice. The present understanding of the elementary mechanisms responsible for carrier thermalization and cooling is briefly reviewed. In semiconductors, the electron hole plasma acts as intermediate energy storage. Recombination limits the maximum density and determines lattice heating in degenerate conditions. Experiments with femtosecond and picosecond laser sources have unraveled the salient features of the energy dissipation routes from photons to lattice.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrea Marco Malvezzi "Invited Paper Fundamentals Of High Excitation Phenomena In Laser Processing", Proc. SPIE 0801, High Power Lasers: Sources, Laser-Material Interactions, High Excitations, and Fast Dynamics, (22 September 1987); https://doi.org/10.1117/12.941223
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KEYWORDS
Picosecond phenomena

Phonons

Semiconductors

Scattering

Plasma

Plasmons

Femtosecond phenomena

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