Electroluminescence from Si nanocrystals by annealing amorphous silicon carbide films

Yunjun Rui; Shuxin Li; Chao Song; Hongcheng Sun; Tao Lin; Yu Liu; Jun Xu; Wei Li; Kunji Chen

doi:10.1117/12.888225

18 February 2011 Electroluminescence from Si nanocrystals by annealing amorphous silicon carbide films

Yunjun Rui, Shuxin Li, Chao Song, Hongcheng Sun, Tao Lin, Yu Liu, Jun Xu, Wei Li, Kunji Chen

Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 799514 (2011) https://doi.org/10.1117/12.888225
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China

Abstract

In this work, a-SiC:H films have been fabricated in plasma enhanced chemical vapor deposition system by controlling the gas flux ratio R of methane to silane and subsequently annealed in N₂ atmosphere for 1 h at the temperature of 1000°C. Raman spectra showed the formation of Si nanocrystals embedded in amorphous SiC matrix after annealing. Room temperature visible electroluminescence was achieved due to the recombination of electron-hole pairs in Si nanocrystals for the annealed samples. The current-voltage relationships were also investigated and the tunneling mechanism was discussed based on the carrier transport properties.

Citation Download Citation

Yunjun Rui, Shuxin Li, Chao Song, Hongcheng Sun, Tao Lin, Yu Liu, Jun Xu, Wei Li, and Kunji Chen "Electroluminescence from Si nanocrystals by annealing amorphous silicon carbide films", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799514 (18 February 2011); https://doi.org/10.1117/12.888225

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