Paper
18 February 2011 Arsenic-doped narrow-gap HgCdTe epilayers studied by infrared modulation spectroscopy
Jun Shao, Wei Lu, Lu Chen, Xiang Lu, Shaoling Guo, Junhao Chu, Li He
Author Affiliations +
Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 799503 (2011) https://doi.org/10.1117/12.888532
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China
Abstract
We outline experimental data recently established in our study of in-situ arsenic (As) doped narrow-gap Hg1-xCdxTe films by infrared modulation spectroscopy. After a brief introduction of the step-scan Fourier transform infrared spectrometer-based modulation spectroscopic techniques, impurity levels and photomodulation mechanisms in As-doped HgCdTe epilayers are surveyed based on infrared modulation spectroscopic data, and the possibility of identifying cut-off wavelength and vertical uniformity of HgCdTe epilayers is indicated. The results illustrate that the infrared modulation spectroscopy will play an important role in optical characterization of narrow-gap semiconductors.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Shao, Wei Lu, Lu Chen, Xiang Lu, Shaoling Guo, Junhao Chu, and Li He "Arsenic-doped narrow-gap HgCdTe epilayers studied by infrared modulation spectroscopy", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799503 (18 February 2011); https://doi.org/10.1117/12.888532
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Infrared spectroscopy

Modulation

Infrared radiation

Spectroscopy

Mercury cadmium telluride

Signal to noise ratio

FT-IR spectroscopy

Back to Top