Study on a few &#945;-disulfone compounds as photoacid generators

Dongfang Guo; Juan Liu; Liyuan Wang

doi:10.1117/12.879296

15 April 2011 Study on a few α-disulfone compounds as photoacid generators

Dongfang Guo, Juan Liu, Liyuan Wang

Proceedings Volume 7972, Advances in Resist Materials and Processing Technology XXVIII; 79722D (2011) https://doi.org/10.1117/12.879296
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

In this work a few α-disulfone compounds with different substituents were prepared by a simple nitric acid oxidation of corresponding disulfonylhydrazines which were prepared by reaction of sulfonyl chloride and aqueous hydrazine. Most of the compounds are soluble in common organic solvents for photoresists. The thermal decomposition temperatures of the compounds were detected to be above 190 °C. The UV absorption spectra of the α-disulfone compounds were measured with the absorption peaks (λmax) around 250 nm. Quantum yields of the disulfone compounds in solution were determined to be in the range of 0.4-0.6 with low pressure Hg lamp as exposure light source.

Citation Download Citation

Dongfang Guo, Juan Liu, and Liyuan Wang "Study on a few α-disulfone compounds as photoacid generators", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79722D (15 April 2011); https://doi.org/10.1117/12.879296

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