Photoresist shrinkage effects at EUV

Thomas V. Pistor; Thomas I. Wallow; Christopher N. Anderson; Patrick P. Naulleau

doi:10.1117/12.879554

8 April 2011 Photoresist shrinkage effects at EUV

Thomas V. Pistor, Thomas I. Wallow, Christopher N. Anderson, Patrick P. Naulleau

Proceedings Volume 7969, Extreme Ultraviolet (EUV) Lithography II; 796917 (2011) https://doi.org/10.1117/12.879554
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Volumetric mechanical resist shrinkage is shown to cause pattern distortions and profile footing. The shrinkage-induced pattern distortions include corner rounding effects and are essentially the explanation for the corner rounding bias previously observed by Anderson et al.[1]. Two previously-studied mechanisms for resist shrinkage are described: SEM-induced shrinkage and deprotection-induced shrinkage. A third mechanism, shrinkage induced at post-apply bake is also described. Experiments indicate that SEM-induced shrinkage accounts for the vast majority of shrinkage and pattern distortion while deprotection-induced shrinkage, although present, does not contribute significantly to pattern distortion. Shrinkage due to post-apply bake was not observed and thought to be insignificant. A three-dimensional model for shrinkage, based on the standard elastostatic problem in solid mechanics was implemented into a lithography simulator. The model was able to predict two dimensional pattern distortions similar to those observed experimentally.

Citation Download Citation

Thomas V. Pistor, Thomas I. Wallow, Christopher N. Anderson, and Patrick P. Naulleau "Photoresist shrinkage effects at EUV", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796917 (8 April 2011); https://doi.org/10.1117/12.879554

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