Nitride nanowire structures for LED applications

Henning Riechert; Oliver Brandt; Caroline Cheze; Vincent Consonni; Matthias Knelangen; Jonas Lähnemann; Friederich Limbach; Carsten Pfüller; Achim Trampert; Martin Wölz; Lutz Geelhaar

doi:10.1117/12.877458

9 February 2011 Nitride nanowire structures for LED applications

Henning Riechert, Oliver Brandt, Caroline Cheze, Vincent Consonni, Matthias Knelangen, Jonas Lähnemann, Friederich Limbach, Carsten Pfüller, Achim Trampert, Martin Wölz, Lutz Geelhaar

Author Affiliations +

Proceedings Volume 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV; 79540S (2011) https://doi.org/10.1117/12.877458
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

This paper discusses some of the advantages of nanowire structures for use in LEDs as well as the challenges that need to be overcome towards the realisation of real-world devices. Our experimental results pertain to group-III nitride nanowire structures grown by MBE. We present clear evidence that the catalyst-free growth approach on Si yields best results with respect to structural and optical material properties. We elucidate the mechanism of nanowire nucleation and the factors determining the initial nanowire diameter, discuss the issue of InGaN growth in small-diameter nitride nanowires and review the results reported for nanowire-based group-III nitride LEDs reported so far.

Citation Download Citation

Henning Riechert, Oliver Brandt, Caroline Cheze, Vincent Consonni, Matthias Knelangen, Jonas Lähnemann, Friederich Limbach, Carsten Pfüller, Achim Trampert, Martin Wölz, and Lutz Geelhaar "Nitride nanowire structures for LED applications", Proc. SPIE 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, 79540S (9 February 2011); https://doi.org/10.1117/12.877458

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