Anderson localization of light in a random configuration of semiconductor nanocolumns

Y. Inose; M. Sakai; K. Ema; A. Kikuchi; K. Kishino; T. Ohtsuki

doi:10.1117/12.876128

1 March 2011 Anderson localization of light in a random configuration of semiconductor nanocolumns

Y. Inose, M. Sakai, K. Ema, A. Kikuchi, K. Kishino, T. Ohtsuki

Proceedings Volume 7946, Photonic and Phononic Properties of Engineered Nanostructures; 794629 (2011) https://doi.org/10.1117/12.876128
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

In the two-dimensional random system composed of a disordered array of a dielectric cylindrical column ensemble, Anderson localization of light is possible. We show localization parameter maps for the light localization adopting parameters of gallium nitride nanocolumn samples, which consist of random arrays of parallel nanosized columnar semiconductor crystals. The maps indicate parametric dependence of the localization characteristics on the light frequency, the radius of the columns, and the filling fraction of the columns. To obtain the maps, we have simulated temporal light diffusion in random media using the two-dimensional finite-difference time-domain method and analyzed the simulation results by Fourier transformation. We conclude that the main mechanism for localization varies continuously with the column filling fraction from Mie resonance of single column to Bragg-like diffraction of the column ensemble.

Citation Download Citation

Y. Inose, M. Sakai, K. Ema, A. Kikuchi, K. Kishino, and T. Ohtsuki "Anderson localization of light in a random configuration of semiconductor nanocolumns", Proc. SPIE 7946, Photonic and Phononic Properties of Engineered Nanostructures, 794629 (1 March 2011); https://doi.org/10.1117/12.876128

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KEYWORDS

Finite-difference time-domain method

Polarization

Gallium nitride

Dielectrics

Semiconductors

Diffraction

Dielectric polarization

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