Paper
24 January 2011 Optical properties of narrow-bandgap dilute nitrides
S. Kuboya, M. Kuroda, Q. T. Thieu, R. Katayama, K. Onabe
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Abstract
In this work, the detailed MOVPE growth properties of InAsN films with N contents up to 2.54% and the photoluminescence properties in relation with the carrier concentrations were investigated. For the MOVPE growth, tertiary-butylarsine (TBAs) and 1,1-dimethylhydrazine (DMHy) were used as the group-V precursors. The efficient growth conditions for the InAsN films with higher N contents are a higher DMHy/V ratio and a lower As/In ratio. The photoluminescence emission from the post-annealed InAsN films exhibits a blue-shift with increasing the N content, which is contrary to the expected bandgap bowing. The same blue-shift behavior was observed in InAsN films grown on SI-GaAs(001) substrate by RF-MBE. As a result of temperature dependent photoluminescence measurements under various excitation powers, it was found that the blue-shift of the PL-peak energy of the InAsN films was attributed to the band-filling effect due to the degenerate electrons induced by the N incorporation.
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S. Kuboya, M. Kuroda, Q. T. Thieu, R. Katayama, and K. Onabe "Optical properties of narrow-bandgap dilute nitrides", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 794518 (24 January 2011); https://doi.org/10.1117/12.865767
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KEYWORDS
Luminescence

Indium arsenide

Electrons

Absorption

Optical properties

Temperature metrology

Nitrogen

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