Electrical properties of In-doped ZnO films grown by plasma-assisted molecular beam epitaxy on GaN(0001) template

Cheng-Yu Chen; Li-Han Siao; Jen-Inn Chyi; Chih-Kang Chao; Chih-Hung Wu

doi:10.1117/12.877210

3 March 2011 Electrical properties of In-doped ZnO films grown by plasma-assisted molecular beam epitaxy on GaN(0001) template

Cheng-Yu Chen, Li-Han Siao, Jen-Inn Chyi, Chih-Kang Chao, Chih-Hung Wu

Author Affiliations +

Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79392J (2011) https://doi.org/10.1117/12.877210
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

Indium doped ZnO films have been successfully deposited on high resistivity GaN(0001) templates by plasma-assisted molecular beam epitaxy. N-type ZnO with carrier concentration of 4.35x10²⁰ cm^-3 and electron mobility of 5.7 cm/V-s, leading to resistivity of 2.6x10^-3 Ω-cm, are measured by Hall measurements. Under low indium doping flux, the carrier concentration increases accordingly with indium cell temperature until a max concentration is achieved as it might reach the In solubility. Further increase in doping flux leads to lower carrier concentration. X-ray diffraction spectra also show the degraded crystal quality as In doping concentration increases. Low temperature photoluminescence indicates that donor bound excitons dominate the emission while deep level emissions are not present in our In-doped ZnO films.

Citation Download Citation

Cheng-Yu Chen, Li-Han Siao, Jen-Inn Chyi, Chih-Kang Chao, and Chih-Hung Wu "Electrical properties of In-doped ZnO films grown by plasma-assisted molecular beam epitaxy on GaN(0001) template", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79392J (3 March 2011); https://doi.org/10.1117/12.877210

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