Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate

Ching-Hsueh Chiu; Da-Wei Lin; Zhen-Yu Li; Shih-Chun Ling; Hao-Chung Kuo; Tien-Chang Lu; Shing-Chung Wang; Wei-Tasi Liao; Tomoyuki Tanikawa; Yoshio Honda; Masahito Yamaguchi; Nobuhiko Sawaki

doi:10.1117/12.876656

3 March 2011 Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate

Ching-Hsueh Chiu, Da-Wei Lin, Zhen-Yu Li, Shih-Chun Ling, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, Wei-Tasi Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

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Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79391X (2011) https://doi.org/10.1117/12.876656
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

We present a study of semi-polar (1-101) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.

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Ching-Hsueh Chiu, Da-Wei Lin, Zhen-Yu Li, Shih-Chun Ling, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, Wei-Tasi Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, and Nobuhiko Sawaki "Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79391X (3 March 2011); https://doi.org/10.1117/12.876656

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