Recent developments in AlGaN-based laser diodes for short ultraviolet region

Harumasa Yoshida; Masakazu Kuwabara; Yoji Yamashita; Kazuya Uchiyama; Hirofumi Kan

doi:10.1117/12.871742

3 March 2011 Recent developments in AlGaN-based laser diodes for short ultraviolet region

Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Kazuya Uchiyama, Hirofumi Kan

Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79390V (2011) https://doi.org/10.1117/12.871742
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

We present a review of nitride laser diodes lasing at short ultraviolet wavelengths. The room temperature operations of the AlGaN based laser diodes under pulsed current mode are presented. The optical and temperature characteristics as well as the carrier recombination of the devices are also investigated.

Citation Download Citation

Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Kazuya Uchiyama, and Hirofumi Kan "Recent developments in AlGaN-based laser diodes for short ultraviolet region", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79390V (3 March 2011); https://doi.org/10.1117/12.871742

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