Paper
3 March 2011 Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions
Jing Zhang, Hua Tong, Guangyu Liu, Juan A. Herbsommer, G. S. Huang, Nelson Tansu
Author Affiliations +
Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79390O (2011) https://doi.org/10.1117/12.875125
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
Thermoelectric properties of AlInN alloys, grown by metalorganic vapor phase epitaxy (MOVPE), with In-contents (x) from 11 % up to 21.34% were characterized and analyzed at room temperature. The thermoelectric figure of merit (Z*T) values of the n-Al1-xInxN alloys were measured as high as 0.391 up to 0.532 at T = 300 K. The use of high In-content (x = 21.34%) AlInN alloys leads to significant reduction in thermal conductivity [κ = 1.62 W/(mK)] due to the increased alloy scattering, however, the optimized thermoelectric material was obtained for AlInN alloy with In-content of 17% attributed to its large power factor.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jing Zhang, Hua Tong, Guangyu Liu, Juan A. Herbsommer, G. S. Huang, and Nelson Tansu "Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79390O (3 March 2011); https://doi.org/10.1117/12.875125
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KEYWORDS
Thermoelectric materials

Gallium nitride

Sapphire

Temperature metrology

Scattering

Silica

Metals

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