Role of In-segregation in anomalously large band-gap bowings of (In,Al,Ga)N

I. Gorczyca; T. Suski; N. E. Christensen; A. Svane

doi:10.1117/12.873402

3 March 2011 Role of In-segregation in anomalously large band-gap bowings of (In,Al,Ga)N

I. Gorczyca, T. Suski, N. E. Christensen, A. Svane

Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79390J (2011) https://doi.org/10.1117/12.873402
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

Large bowings of the band gap and its pressure coefficient in In-containing nitride semiconductor alloys are observed. Photoluminescence measurements for In_xGa_1-xN and In_xAl_1-xN combined with other experimental data show large scatter of the results. A comparison with ab-initio calculations suggests that this scatter can be ascribed to the formation of In clusters during the sample preparation. The explanation of the observed anomalies taking into account chemical and size effects indicates a specific nature of InN, different from other nitrides and other In-based binary semiconductors.

Citation Download Citation

I. Gorczyca, T. Suski, N. E. Christensen, and A. Svane "Role of In-segregation in anomalously large band-gap bowings of (In,Al,Ga)N", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79390J (3 March 2011); https://doi.org/10.1117/12.873402

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