Determination Of Critical Thickness In In[sub]x[/sub]Ga[sub]1-x[/sub]As/GaAs Heterostructures By X-Ray Diffraction And Photoluminescence Measurements

P. J. Orders; B. F. Usher; M. Gal; P. C. Taylor

doi:10.1117/12.940854

11 August 1987 Determination Of Critical Thickness In In_xGa_1-xAs/GaAs Heterostructures By X-Ray Diffraction And Photoluminescence Measurements

P. J. Orders, B. F. Usher, M. Gal, P. C. Taylor

Author Affiliations +

Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940854
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

The critical thickness hc of strained InxGa1-x As/GaAs layers grown by molecular beam epitaxy (MBE) on GaAs (100) substrates is determined by double crystal x-ray diffraction and low-temperature photoluminescence measurements for 0.07 < x < 0.25. The x-ray rocking curves exhibit peaks from the InxGa1-xAs layer that are easily detectable at thicknesses as low as 100 Å. The intensity of the photoluminescence peak is found to persist well beyond the experimentally determined critical thickness. Both techniques give essentially the same values of hc. The experimental results are compared with theoretical values of hc that are calculated from mechanical equilibrium and energy balance models. Good agreement is obtained between the results from the energy balance model and the experimental data.

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P. J. Orders, B. F. Usher, M. Gal, and P. C. Taylor "Determination Of Critical Thickness In In_xGa_1-xAs/GaAs Heterostructures By X-Ray Diffraction And Photoluminescence Measurements", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940854

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