Bandgap Energy Pressure Coefficients In Strained-Layer Structures

E. D. Jones; I. J. Fritz; H. P. Hjalmarson; J. E. Schirber; M. C. Smith; R. M. Biefeld; L. R. Dawson; T. J. Drummond

doi:10.1117/12.940828

11 August 1987 Bandgap Energy Pressure Coefficients In Strained-Layer Structures

E. D. Jones, I. J. Fritz, H. P. Hjalmarson, J. E. Schirber, M. C. Smith, R. M. Biefeld, L. R. Dawson, T. J. Drummond

Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940828
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

The hydrostatic-pressure coefficients of the bandgap energies for four different types of semiconductor heterojunction structures were obtained from photoluminescence measurements at 4K and pressures up to 4 kbar. The structures studied were n-type and p-type InxGa1-xAs/GaAs and n-type GaAs/GaPx As1-x strained-layer superlattices, n-type InxGa1-xAs/GaAs single strained quantum wells and an undoped GaAs/AlAs superlattice. The bandgap energies ranged from 1800 meV for the GaAs/ALAS structure to 1280 meV for the InxGa1-xAs/GaAs single strained quantum wells. Pressure coefficients for the InxGa1- As/GaAs and GaAs/GaPxAs1-x structures were found to be in the range of 10 to 12 meV/bar. However, the pressure coefficient of the luminescence energy from the GaAs/AlAs superlattice was found to be -2 meV/kbar. This negative pressure coefficient is consistent with the interpretation that the luminescence is due to a transition between the conduction-band X-point in the AlAs layers and the valence-band r-point in the GaAs layers.

Citation Download Citation

E. D. Jones, I. J. Fritz, H. P. Hjalmarson, J. E. Schirber, M. C. Smith, R. M. Biefeld, L. R. Dawson, and T. J. Drummond "Bandgap Energy Pressure Coefficients In Strained-Layer Structures", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940828

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