Paper
16 February 2011 Dark noise in a CMOS imager pixel with negative bias on transfer gate
Hirofumi Yamashita, Motohiro Maeda, Shogo Furuya, Takanori Yagami
Author Affiliations +
Proceedings Volume 7875, Sensors, Cameras, and Systems for Industrial, Scientific, and Consumer Applications XII; 78750J (2011) https://doi.org/10.1117/12.876368
Event: IS&T/SPIE Electronic Imaging, 2011, San Francisco Airport, California, United States
Abstract
Negative bias on transfer gate in 4-transistor CMOS imager pixel is an efficient way to reduce dark current generated at the Si-SiO2 interface. But further lowering of negative bias increases dark current noise. In this paper, detailed cause analysis of dark current noise generated when negative bias is applied and the key technology to reduce the dark current noise are shown. The dark output level of hot pixel follows a Trap-Assisted-Tunneling (TAT) dark current electric field dependency. Device simulation shows that the generation of high electric field is attributed to the large voltage difference between the high concentration hole accumulation layer under negatively biased transfer gate and n- layer of FD edge along transfer gate. The reduction of dark current in FD is experimentally observed when the n- dopnat concentration at FD edge is decreased and when a gate insulator thickness is increased. The results show that the mechanism of the dark current increase is Gate-Induced-Leak (GIL) TAT generated by high electric field at the edge of a FD along negatively biased transfer gate. The reduction of the maximum electric filed at the FD edge by reducing FD dopant concentration is one of the key to suppress the GIL - TAT dark current.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hirofumi Yamashita, Motohiro Maeda, Shogo Furuya, and Takanori Yagami "Dark noise in a CMOS imager pixel with negative bias on transfer gate", Proc. SPIE 7875, Sensors, Cameras, and Systems for Industrial, Scientific, and Consumer Applications XII, 78750J (16 February 2011); https://doi.org/10.1117/12.876368
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Cited by 2 scholarly publications and 6 patents.
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KEYWORDS
Device simulation

Dielectrics

Imaging systems

Vacuum fluorescent displays

Diffusion

Ion implantation

Silicon

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