Hydrogen and argon plasma passivation technology in GaAs/AlGaAs LD cavity surfaces

Chunling Liu; Chunwu Wang; Yanping Yao

doi:10.1117/12.871677

12 November 2010 Hydrogen and argon plasma passivation technology in GaAs/AlGaAs LD cavity surfaces

Chunling Liu, Chunwu Wang, Yanping Yao

Proceedings Volume 7844, Semiconductor Lasers and Applications IV; 784419 (2010) https://doi.org/10.1117/12.871677
Event: Photonics Asia 2010, 2010, Beijing, China

Abstract

Hydrogen (H₂) and Argon (Ar) plasma passivation technology was investigated to improve the optical properties of the III-V laser diodes. The main experiment was carried out in the vacuum chamber of the magnetron sputtering system. At first, H₂ and Ar plasma passivation treatment was performed on the GaAs (110) surfaces. The obtained optimum passivation conditions were 65-W radio frequency (RF) of power and 15-min duration, the flow of hydrogen and argon were also 20 sccm.The effect of passivation was characterized by photoluminescence (PL) measurements,the PL intensity of GaAs(110) after passivating was about 10 times of that the unpassivated samples. And then the laser cavity surfaces were treated under the optimum passivation conditions.Consequently,compared with the unpassivated lasers with only AR/HR-coatings, the catastrophic optical damage (COD) threshold value of the passivated lasers by H₂ and Ar plasma treatment was increased by 30 per cent.In the 20 ~ 80°C temperature range, characteristic temperature value of 128K was incresed by 11.3 per cent.The processing is simple and high efficient, can be widely applied to the III-V laser diode devices.

Citation Download Citation

Chunling Liu, Chunwu Wang, and Yanping Yao "Hydrogen and argon plasma passivation technology in GaAs/AlGaAs LD cavity surfaces", Proc. SPIE 7844, Semiconductor Lasers and Applications IV, 784419 (12 November 2010); https://doi.org/10.1117/12.871677

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