An InP-based wide gain spectrum asymmetric quantum wells for large scale optoelectronic monolithic integration

Hongyun Xie; Zhiyi Lu; Pei Shen; Chunbao Ding; Liang Chen; Wanrong Zhang

doi:10.1117/12.871363

12 November 2010 An InP-based wide gain spectrum asymmetric quantum wells for large scale optoelectronic monolithic integration

Hongyun Xie, Zhiyi Lu, Pei Shen, Chunbao Ding, Liang Chen, Wanrong Zhang

Author Affiliations +

Proceedings Volume 7844, Semiconductor Lasers and Applications IV; 784416 (2010) https://doi.org/10.1117/12.871363
Event: Photonics Asia 2010, 2010, Beijing, China

Abstract

Large scale optoelectronic monolithic integration for optical fiber communication makes more and more optoelectronic active devices and passive components integrate into a single chip. It is necessary to provide enough wide gain spectrum to satisfy the requirement from each device. In this paper, based the analysis on the gain spectrum of InGaAsP/InP quantum well, the dependence of its gain spectrum bandwidth on the well width and doping concentration was derived. An asymmetric quantum well with the same doping concentration and different well width was design to realize the destination. The simulation results prove that the asymmetric quantum well indeed make the gain spectrum wider. Then the asymmetric quantum wells were grown successfully by low pressure MOCVD at 665°C. The full width at half maximum (FWHM) of 115nm was observed in its amplified spontaneous emission (ASE) spectrum, which was flatter and wider than that of the symmetric quantum wells.

Citation Download Citation

Hongyun Xie, Zhiyi Lu, Pei Shen, Chunbao Ding, Liang Chen, and Wanrong Zhang "An InP-based wide gain spectrum asymmetric quantum wells for large scale optoelectronic monolithic integration", Proc. SPIE 7844, Semiconductor Lasers and Applications IV, 784416 (12 November 2010); https://doi.org/10.1117/12.871363

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