Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes

Vincent Goiffon; Cédric Virmontois; Pierre Magnan; Paola Cervantes; Franck Corbière; Magali Estribeau; Philippe Pinel

doi:10.1117/12.868443

13 October 2010 Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes

Vincent Goiffon, Cédric Virmontois, Pierre Magnan, Paola Cervantes, Franck Corbière, Magali Estribeau, Philippe Pinel

Author Affiliations +

Proceedings Volume 7826, Sensors, Systems, and Next-Generation Satellites XIV; 78261S (2010) https://doi.org/10.1117/12.868443
Event: SPIE Remote Sensing, 2010, Toulouse, France

Abstract

This paper presents a summary of the main results we observed after several years of study on irradiated custom imagers manufactured using 0.18 μm CMOS processes dedicated to imaging. These results are compared to irradiated commercial sensor test results provided by the Jet Propulsion Laboratory to enlighten the differences between standard and pinned photodiode behaviors. Several types of energetic particles have been used (gamma rays, X-rays, protons and neutrons) to irradiate the studied devices. Both total ionizing dose (TID) and displacement damage effects are reported. The most sensitive parameter is still the dark current but some quantum efficiency and MOSFET characteristics changes were also observed at higher dose than those of interest for space applications. In all these degradations, the trench isolations play an important role. The consequences on radiation testing for space applications and radiation-hardening-by-design techniques are also discussed.

Citation Download Citation

Vincent Goiffon, Cédric Virmontois, Pierre Magnan, Paola Cervantes, Franck Corbière, Magali Estribeau, and Philippe Pinel "Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes", Proc. SPIE 7826, Sensors, Systems, and Next-Generation Satellites XIV, 78261S (13 October 2010); https://doi.org/10.1117/12.868443

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available