EUV mask defectivity study by existing DUV tools and new e-beam technology

Shmoolik Mangan; Rik Jonckheere; Dieter Van Den Heuvel; Moshe Rozentsvige; Vladislav Kudriashov; Ran Brikman; Lior Shoval; Gaetano Santoro; Ilan Englard

doi:10.1117/12.864351

29 November 2010 EUV mask defectivity study by existing DUV tools and new e-beam technology

Shmoolik Mangan, Rik Jonckheere, Dieter Van Den Heuvel, Moshe Rozentsvige, Vladislav Kudriashov, Ran Brikman, Lior Shoval, Gaetano Santoro, Ilan Englard

Author Affiliations +

Proceedings Volume 7823, Photomask Technology 2010; 78232A (2010) https://doi.org/10.1117/12.864351
Event: SPIE Photomask Technology, 2010, Monterey, California, United States

Abstract

While EUV lithography is approaching the pre-production stage, improving mask defectivity is recognized as a top challenge. The accepted strategy for EUV reticle qualification is to use a combination of a dedicated blank inspection (BI) to visualize EUV-specific multi-layer (ML) defects and patterned-mask inspection (PMI) that must be capable to meet the resolution requirements of the pattern. Actinic inspection is considered the strongest option for the blank inspection because of the limitation of optical light to visualize the nm-high distortions within the ML. Earlier publications showed that wafer inspection (WI) can potentially reveal such mask defects, This is, however, too late within the process. In addition, existing PMI and wafer inspection approaches exhibit limitations in detection capability and gaps are observed between detection of printed defects and defects detected on the mask (and the blank). We compare existing inspection solutions for detection of EUV mask defects (193nm based mask inspection and repeater analysis in a DUV wafer inspection) and present a feasibility study for use of a fast e-beam technology for mask inspection. Finally, we discuss the prospects of existing DUV tools and future e-beam technology to support EUV reticle inspection for current and future nodes.

Citation Download Citation

Shmoolik Mangan, Rik Jonckheere, Dieter Van Den Heuvel, Moshe Rozentsvige, Vladislav Kudriashov, Ran Brikman, Lior Shoval, Gaetano Santoro, and Ilan Englard "EUV mask defectivity study by existing DUV tools and new e-beam technology", Proc. SPIE 7823, Photomask Technology 2010, 78232A (29 November 2010); https://doi.org/10.1117/12.864351

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available