Degradation of pattern quality due to strong electron scattering in EUV mask

Jin Choi; Rae Won Lee; Sang Hee Lee; Byung Sup Ahn; Hee Bom Kim; Sang-Gyun Woo; Han Ku Cho

doi:10.1117/12.864212

24 September 2010 Degradation of pattern quality due to strong electron scattering in EUV mask

Jin Choi, Rae Won Lee, Sang Hee Lee, Byung Sup Ahn, Hee Bom Kim, Sang-Gyun Woo, Han Ku Cho

Proceedings Volume 7823, Photomask Technology 2010; 78230D (2010) https://doi.org/10.1117/12.864212
Event: SPIE Photomask Technology, 2010, Monterey, California, United States

Abstract

The ray tracing of electron based on Monte Carlo is simulated by GEANT software to investigate the electron scattering property in ArF photomask and EUV photomask. By Monte Carlo simulation, we have presented the mechanism of electron scattering in EUV photomask and simulated the electron distribution which gives rise to change the patterning performance of EUV photomask, compared with those of ArF photomask. Furthermore, the overlay error of EUV photomask has been analyzed by the charging model. EUV photomask has the additional electron distribution in the range of 2um, which comes from the strong electron scattering at Mo/Si multilayer. Because of this additional electron distribution, EUV photomask has the pattern size error due to proximity effect of electron when the conventional Gaussian function is used to correct the proximity effect of ArF photomask. The maximum residual error due to the proximity effect in EUV photomask is 7nm. Furthermore, we have confirmed that the linearity of pattern size is so different from ArF photomask and it is well explained with the Gaussian blur model based on the electron distribution of EUV photomask.

Citation Download Citation

Jin Choi, Rae Won Lee, Sang Hee Lee, Byung Sup Ahn, Hee Bom Kim, Sang-Gyun Woo, and Han Ku Cho "Degradation of pattern quality due to strong electron scattering in EUV mask", Proc. SPIE 7823, Photomask Technology 2010, 78230D (24 September 2010); https://doi.org/10.1117/12.864212

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