Improving the optical and electrical properties of fluorine-doped tin oxide films by various post-annealing treatments

Pin-Jen Chen; Bo-Huei Liao; Chien-Cheng Kuo; Cheng-Chung Lee

doi:10.1117/12.860492

19 August 2010 Improving the optical and electrical properties of fluorine-doped tin oxide films by various post-annealing treatments

Pin-Jen Chen, Bo-Huei Liao, Chien-Cheng Kuo, Cheng-Chung Lee

Author Affiliations +

Proceedings Volume 7786, Current Developments in Lens Design and Optical Engineering XI; and Advances in Thin Film Coatings VI; 77860Q (2010) https://doi.org/10.1117/12.860492
Event: SPIE Optical Engineering + Applications, 2010, San Diego, California, United States

Abstract

Transparent conducting Fluorine-doped tin oxide (FTO) thin films were deposited on glass substrates by pulsed DC magnetron sputtering from cost saving metal targets. We observed lower resistivity and higher average transmittance in the visible range after the application of various post heating treatments. The electrical and optical properties of FTO films were investigated. When the annealing temperature is 400°C in air, the average transmittance is 79.79% with the lowest resistivity of 1.38×10^-3 Ω-cm, carrier density of 2.27×10²⁰ cm^-3 and mobility of 20 cm²/ V-s. When the annealing temperature is 400°Cin a H₂ 5%+N₂ 95% atmosphere, the average transmittance is 79.75 % with the lowest resistivity of 1.26×10^-3 Ω-cm, carrier density of 2.17×10²⁰ cm^-3 and mobility of 22.8 cm²/ V-s. When the annealing temperature is 350 °C in vacuum, the average transmittance is 80.48% with the lowest resistivity of 1.23×10^-3 Ω-cm, carrier density of 4.40×10²⁰ cm^-3 and mobility of 11.6 cm²/ V-s.

Citation Download Citation

Pin-Jen Chen, Bo-Huei Liao, Chien-Cheng Kuo, and Cheng-Chung Lee "Improving the optical and electrical properties of fluorine-doped tin oxide films by various post-annealing treatments", Proc. SPIE 7786, Current Developments in Lens Design and Optical Engineering XI; and Advances in Thin Film Coatings VI, 77860Q (19 August 2010); https://doi.org/10.1117/12.860492

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