Cladding index engineering of the photonic properties of single-mode photonic crystal devices

M. D. Weed; H. P. Seigneur; W. V. Schoenfeld

doi:10.1117/12.860267

19 August 2010 Cladding index engineering of the photonic properties of single-mode photonic crystal devices

M. D. Weed, H. P. Seigneur, W. V. Schoenfeld

Proceedings Volume 7764, Nanoengineering: Fabrication, Properties, Optics, and Devices VII; 776403 (2010) https://doi.org/10.1117/12.860267
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States

Abstract

In an effort to engineer photonic crystal slab (PCS) devices that operate within a single slab-mode regime, the effect of increased cladding index was studied using FDTD simulation. It is known that while increased cladding index forces the light-cone to constrict in frequency, the single mode condition eases allowing for the use of thicker slabs that remain single-mode. This study shows that the behavior of the photonic band gap is similar to that of the light-cone, sweeping lower in frequency, and even widening in some cases, as cladding index increases. Band gap behavior for both even and odd polarizations over thicknesses from d/a = 0.2 to 0.6 and cladding indices from 1 to 2.5 were studied in efforts to design a single-mode, polarization insensitive, complete band gap. When graphically overlaid, the light-cone, single-mode condition, and transmission spectra represent an enabling reference for the design of realizable structures. For device applications where modal dispersion is detrimental or single mode operation is necessary, a paradigm shift away from air-bridge devices is shown to be essential as single-mode structures of this type demand slab thicknesses far too thin for adequate band gap engineering.

Citation Download Citation

M. D. Weed, H. P. Seigneur, and W. V. Schoenfeld "Cladding index engineering of the photonic properties of single-mode photonic crystal devices", Proc. SPIE 7764, Nanoengineering: Fabrication, Properties, Optics, and Devices VII, 776403 (19 August 2010); https://doi.org/10.1117/12.860267

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