Well organized Si nanowires arrays synthesis for electronic devices

E. Lefeuvre; K.H. Kim; Z. B. He; J. L. Maurice; M. Chatelet; D. Pribat; B. S. Kim; C. S. Cojocaru

doi:10.1117/12.863923

24 August 2010 Well organized Si nanowires arrays synthesis for electronic devices

E. Lefeuvre, K.H. Kim, Z. B. He, J. L. Maurice, M. Chatelet, D. Pribat, B. S. Kim, C. S. Cojocaru

Proceedings Volume 7761, Carbon Nanotubes, Graphene, and Associated Devices III; 776105 (2010) https://doi.org/10.1117/12.863923
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States

Abstract

In this paper we demonstrate the efficiency of porous anodic alumina (PAA) to confine the growth of silicon nanowires (SiNWs). High-density arrays of parallel, straight and organized SiNWs have been realized, by Hot Wire Chemical Vapor Deposition (HW-CVD) growth process inside PAA templates with electrodeposited copper as catalyst. The PAA was made by the anodization of an aluminium layer, followed by the catalysts electrodeposition at the bottom of the pores. Subsequently, SiNWs were grown in a modified HW-CVD reactor with SiH₄ as the precursor gas. The morphology and the structure of the wires have been investigated by SEM and TEM, and their collective electrical behavior has been characterized with a 2-probes device.

Citation Download Citation

E. Lefeuvre, K.H. Kim, Z. B. He, J. L. Maurice, M. Chatelet, D. Pribat, B. S. Kim, and C. S. Cojocaru "Well organized Si nanowires arrays synthesis for electronic devices", Proc. SPIE 7761, Carbon Nanotubes, Graphene, and Associated Devices III, 776105 (24 August 2010); https://doi.org/10.1117/12.863923

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