Paper
19 July 2010 Measurement results for an x-ray 3D-integrated active pixel sensor
Author Affiliations +
Abstract
We have developed a hybrid Active Pixel Sensor for detecting low energy X-rays. The sensor consists of a silicon diode detector array built on a high resistivity wafer and an SOI CMOS readout circuit, connected together by means of unique 3D integration technology developed at MIT Lincoln Laboratory. In this paper we will describe measurements of sense node capacitance and device depletion depth along with corresponding simulations aimed to optimize device performance. We also describe race condition in the column decoder and identify ways to eliminate it in order to reduce fixed pattern noise.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Prigozhin, R. Foster, V. Suntharalingam, S. Kissel, B. LaMarr, and M. Bautz "Measurement results for an x-ray 3D-integrated active pixel sensor", Proc. SPIE 7742, High Energy, Optical, and Infrared Detectors for Astronomy IV, 77421I (19 July 2010); https://doi.org/10.1117/12.857652
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Capacitance

X-rays

Photodiodes

Sensors

Diodes

Transistors

X-ray detectors

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