Manufacturing of silicon immersion gratings for infrared spectrometers

Weisong Wang; Michael Gully-Santiago; Casey Deen; Douglas J. Mar; Daniel T. Jaffe

doi:10.1117/12.857164

20 July 2010 Manufacturing of silicon immersion gratings for infrared spectrometers

Weisong Wang, Michael Gully-Santiago, Casey Deen, Douglas J. Mar, Daniel T. Jaffe

Proceedings Volume 7739, Modern Technologies in Space- and Ground-based Telescopes and Instrumentation; 77394L (2010) https://doi.org/10.1117/12.857164
Event: SPIE Astronomical Telescopes + Instrumentation, 2010, San Diego, California, United States

Abstract

Silicon immersion gratings have been a promising future technology for high resolution infrared spectroscopy for over 15 years. We report here on our current immersion grating research, including extensive measurements of the performance of micromachined silicon devices. We are currently producing gratings for two high resolution spectrometers: iSHELL at the University of Hawaii and IGRINS at the University of Texas and the Korea Astronomy and Space Science Institute. The gratings are R3 devices with total lengths of ~95 mm. The use of a high index material like silicon permits the spectrometers to have high resolving powers (40,000-70,000) at decent slit sizes with very small (25mm) collimated beams. The lithographic production of coarse grooves allows for instrument designs with continuous wavelength coverage over broad spectral ranges. We discuss the science requirements for grating quality and efficiency and the measurements we have made to verify that the gratings meet these requirements. The measurements include optical interferometry and measurements of the monochromatic point spread function in reflection.

Citation Download Citation

Weisong Wang, Michael Gully-Santiago, Casey Deen, Douglas J. Mar, and Daniel T. Jaffe "Manufacturing of silicon immersion gratings for infrared spectrometers", Proc. SPIE 7739, Modern Technologies in Space- and Ground-based Telescopes and Instrumentation, 77394L (20 July 2010); https://doi.org/10.1117/12.857164

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