A Model For Optimal Beamline Design For Synchrotron Radiation X-Ray Lithography

D. So; B. Lai; F. Cerrina

doi:10.1117/12.940350

30 June 1987 A Model For Optimal Beamline Design For Synchrotron Radiation X-Ray Lithography

D. So, B. Lai, F. Cerrina

Proceedings Volume 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI; (1987) https://doi.org/10.1117/12.940350
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

We present a new model capable of fully describing the image formation in X-ray Lithography with a Synchrotron Radiation source. All the relevant effects, such as beam size, scanning, transmittivity and reflectivity are included. The model itself can be used to predict the achievable resolution for a given process. It is applied to the discussion of a particular process, based on Hewlett Packard mask technology and using one of the Center beamlines, for which we show that resolution in the sub-0.25 micron region can be easily achieved. Solutions to the problem of anamorphicity are presented, as well a discussion of the optimum configuration for scanning.

Citation Download Citation

D. So, B. Lai, and F. Cerrina "A Model For Optimal Beamline Design For Synchrotron Radiation X-Ray Lithography", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); https://doi.org/10.1117/12.940350

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available