Proximity Effects In Submicron Optical Lithography

Paul Chien; Mung Chen

doi:10.1117/12.967031

1 January 1987 Proximity Effects In Submicron Optical Lithography

Paul Chien, Mung Chen

Proceedings Volume 0772, Optical Microlithography VI; (1987) https://doi.org/10.1117/12.967031
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

The proximity effects are becoming a significant consideration to the linewidth control in sub-micron optical lithography, as the lithographic tools are being operated closer to the resolution limit. There are various forms of proximity effects. In this paper, we will attempt to classify the observed proximity effects in optical lithography and analyze their potential impact to device fabrication. The results of SAMPLE simulation and experimental characterization will be presented. Our conclusion from this study is that a method of linewidth compensation must be developed in order to achieve optimum device density and yield, using sub-micron optical lithography.

Citation Download Citation

Paul Chien and Mung Chen "Proximity Effects In Submicron Optical Lithography", Proc. SPIE 0772, Optical Microlithography VI, (1 January 1987); https://doi.org/10.1117/12.967031

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