5Gb/s optical logic AND operations using by monolithically integrated photodiode and electroabsorption modulator

Y. X. Zhang; L. J. Zhao; B. Niu; J. Q. Pan; W. Wang

doi:10.1117/12.854109

14 May 2010 5Gb/s optical logic AND operations using by monolithically integrated photodiode and electroabsorption modulator

Y. X. Zhang, L. J. Zhao, B. Niu, J. Q. Pan, W. Wang

Author Affiliations +

Proceedings Volume 7717, Optical Modelling and Design; 77171B (2010) https://doi.org/10.1117/12.854109
Event: SPIE Photonics Europe, 2010, Brussels, Belgium

Abstract

A novel EAM/PD monolithically-integrated optical logic element is presented. 5Gb/s optical logic AND gate operations at about -2 V for non-return-to-zero (NRZ) signals with8.4dB extinction ratio and16mW absorbed optical power was demonstrated.

Citation Download Citation

Y. X. Zhang, L. J. Zhao, B. Niu, J. Q. Pan, and W. Wang "5Gb/s optical logic AND operations using by monolithically integrated photodiode and electroabsorption modulator", Proc. SPIE 7717, Optical Modelling and Design, 77171B (14 May 2010); https://doi.org/10.1117/12.854109

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